Infineon OptiMOS™ Silicon N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IPD30N06S215ATMA2

Bulk discount available

Subtotal (1 pack of 10 units)*

£8.80

(exc. VAT)

£10.60

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,410 unit(s) ready to ship
  • Plus 999,997,580 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 90£0.88£8.80
100 - 240£0.837£8.37
250 - 490£0.80£8.00
500 - 990£0.766£7.66
1000 +£0.714£7.14

*price indicative

Packaging Options:
RS Stock No.:
222-4664
Mfr. Part No.:
IPD30N06S215ATMA2
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

55 V

Package Type

TO-252

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0147 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications

Related links