Infineon HEXFET Silicon N-Channel MOSFET, 4.7 A, 30 V, 8-Pin SO-8 AUIRF7309QTR
- RS Stock No.:
- 222-4609
- Mfr. Part No.:
- AUIRF7309QTR
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 222-4609
- Mfr. Part No.:
- AUIRF7309QTR
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.7 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.16 Ω | |
| Maximum Gate Threshold Voltage | 3V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.7 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.16 Ω | ||
Maximum Gate Threshold Voltage 3V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
