onsemi NTMT090N N-Channel MOSFET, 36 A, 650 V, 4-Pin PQFN4 8 x 8 NTMT090N65S3HF
- RS Stock No.:
- 221-6734P
- Mfr. Part No.:
- NTMT090N65S3HF
- Brand:
- onsemi
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£84.70
(exc. VAT)
£101.64
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 682 unit(s) shipping from 03 November 2025
- Plus 999,999,316 unit(s) shipping from 02 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 198 | £4.235 |
| 200 + | £3.675 |
*price indicative
- RS Stock No.:
- 221-6734P
- Mfr. Part No.:
- NTMT090N65S3HF
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 36 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PQFN4 8 x 8 | |
| Series | NTMT090N | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.09 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PQFN4 8 x 8 | ||
Series NTMT090N | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.09 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 569 pF
100% avalanche tested
low effective output capacitance 569 pF
100% avalanche tested
