Infineon StrongIRFET N-Channel MOSFET Transistor & Diode, 363 A, 60 V, 7-Pin D2PAK IRF60SC241ARMA1

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Subtotal 20 units (supplied on a continuous strip)*

£54.90

(exc. VAT)

£65.88

(inc. VAT)

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20 - 48£2.745
50 - 98£2.565
100 - 198£2.39
200 +£2.215

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Packaging Options:
RS Stock No.:
220-7472P
Mfr. Part No.:
IRF60SC241ARMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

363 A

Maximum Drain Source Voltage

60 V

Package Type

TO-263-7

Series

StrongIRFET

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.00095 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Number of Elements per Chip

1

The Infineon latest 60 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.

Low RDS(on)
High current capability
Industry standard package
Flexible pinout
Optimized for 10 V gate drive
Reduction in conduction losses
Increased power density
Drop in replacement to existing devices
Offers design flexibility
Provides immunity to false turn-on in noisy environments

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