Infineon CoolMOS™ C7 Dual N-Channel MOSFET Transistor & Diode, 145 A, 700 V, 3-Pin TO-247 IPW65R065C7XKSA1
- RS Stock No.:
- 220-7459
- Mfr. Part No.:
- IPW65R065C7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£11.80
(exc. VAT)
£14.16
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 212 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £5.90 | £11.80 |
| 10 - 18 | £5.31 | £10.62 |
| 20 - 48 | £4.955 | £9.91 |
| 50 - 98 | £4.60 | £9.20 |
| 100 + | £4.30 | £8.60 |
*price indicative
- RS Stock No.:
- 220-7459
- Mfr. Part No.:
- IPW65R065C7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 145 A | |
| Maximum Drain Source Voltage | 700 V | |
| Series | CoolMOS™ C7 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.065 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 145 A | ||
Maximum Drain Source Voltage 700 V | ||
Series CoolMOS™ C7 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.065 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 2 | ||
The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
650V voltage
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding Cool MOS™ quality
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding Cool MOS™ quality
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