Infineon CoolMOS™ G7 Dual N-Channel MOSFET Transistor & Diode, 45 A, 650 V, 10-Pin DDPAK IPDD60R150G7XTMA1

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Subtotal 25 units (supplied on a continuous strip)*

£52.70

(exc. VAT)

£63.25

(inc. VAT)

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  • Shipping from 06 February 2026
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Units
Per unit
25 - 45£2.108
50 - 120£1.982
125 - 245£1.838
250 +£1.69

*price indicative

Packaging Options:
RS Stock No.:
220-7420P
Mfr. Part No.:
IPDD60R150G7XTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ G7

Package Type

DDPAK

Mounting Type

Surface Mount

Pin Count

10

Maximum Drain Source Resistance

0.15 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

The Infineon Technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V Cool MOS G7 super junction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg
Innovative top-side cooling concept
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance
TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves e efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards