Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 49 A, 700 V Enhancement, 3-Pin TO-252

RS Stock No.:: 220-7408
Mfr. Part No.:: IPD65R190C7ATMA1
Brand:: Infineon

Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 49 A, 700 V Enhancement, 3-Pin TO-252

Subtotal (1 reel of 2500 units)*

£2,180.00

(exc. VAT)

£2,615.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 04 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2500 +	£0.872	£2,180.00

*price indicative

RS Stock No.:: 220-7408
Mfr. Part No.:: IPD65R190C7ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	700V
	Series	CoolMOS C7
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	900mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	23nC
	Maximum Power Dissipation Pd	72mW
	Standards/Approvals	No
	Length	6.73mm
	Height	2.41mm
	Width	6.22 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 700V
	Series CoolMOS C7
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 900mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 23nC
	Maximum Power Dissipation Pd 72mW
	Standards/Approvals No
	Length 6.73mm
	Height 2.41mm
	Width 6.22 mm
	Automotive Standard No

Datasheet - IPD65R190C7ATMA1

The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

650V voltage

Revolutionary best-in-class R DS(on)/package

Reduced energy stored in output capacitance (Eoss)

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

12 years manufacturing experience in super junction technology

Improved safety margin and suitable for both SMPS and solar inverter applications

Lowest conduction losses/package

Low switching losses

Better light load efficiency

Increasing power density

Outstanding Cool MOS™ quality