Infineon OptiMOS Dual N-Channel MOSFET Transistor & Diode, 25 A, 30 V, 8-Pin PQFN 3 x 3 BSZ0910NDXTMA1
- RS Stock No.:
- 220-7358
- Mfr. Part No.:
- BSZ0910NDXTMA1
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 220-7358
- Mfr. Part No.:
- BSZ0910NDXTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS | |
| Package Type | PQFN 3 x 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0095 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS | ||
Package Type PQFN 3 x 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0095 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Number of Elements per Chip 2 | ||
The Infineon OptiMOS technology combined with the PQFN 3.0 x 3.0mm package offers an optimized solution for DC-DC applications with space critical requirements. The BSZ0910ND OptiMOS 30V half bridge fits perfectly in wireless charging and drives (e.g. multicoated) architectures where designers target to simplify the layout and significantly save space without compromising on efficiency.
Symmetric half-bridge with very low RDS(on) in a small 3.0 x 3.0mm package outline
Exposed pads
Logic level (4.5V rated)
Low switching losses
High switching frequency operation
Lowest parasitic
Low operating temperature
Low gate drive losses
Exposed pads
Logic level (4.5V rated)
Low switching losses
High switching frequency operation
Lowest parasitic
Low operating temperature
Low gate drive losses
