Infineon CoolMOS™ P7 Dual N-Channel MOSFET, 206 A, 650 V, 3-Pin TO-247 IPW60R045P7XKSA1

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Subtotal 10 units (supplied in a tube)*

£57.80

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£69.40

(inc. VAT)

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10 - 24£5.78
25 - 49£5.40
50 - 99£5.02
100 +£4.64

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Packaging Options:
RS Stock No.:
219-6023P
Mfr. Part No.:
IPW60R045P7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

206 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolMOS™ P7

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.045 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available