Infineon CoolMOS P7 Type N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247 IPW60R045P7XKSA1

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Subtotal 10 units (supplied in a tube)*

£53.30

(exc. VAT)

£64.00

(inc. VAT)

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10 - 24£5.33
25 - 49£4.99
50 - 99£4.64
100 +£4.29

*price indicative

Packaging Options:
RS Stock No.:
219-6023P
Mfr. Part No.:
IPW60R045P7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

206A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

90nC

Maximum Power Dissipation Pd

201W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

5.21mm

Length

16.13mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available