STMicroelectronics STL260N N-Channel MOSFET, 120 A, 40 V, 8-Pin PowerFLAT 5 x 6 STL260N4LF7
- RS Stock No.:
- 219-4230P
- Mfr. Part No.:
- STL260N4LF7
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
£60.85
(exc. VAT)
£73.025
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 23 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £2.434 |
| 50 - 120 | £2.188 |
| 125 - 245 | £2.078 |
| 250 + | £2.024 |
*price indicative
- RS Stock No.:
- 219-4230P
- Mfr. Part No.:
- STL260N4LF7
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PowerFLAT 5 x 6 | |
| Series | STL260N | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.11 O | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PowerFLAT 5 x 6 | ||
Series STL260N | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.11 O | ||
Maximum Gate Threshold Voltage 2.5V | ||
Number of Elements per Chip 1 | ||
The STMicroelectronics N-channel power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
