STMicroelectronics SCTL90N N-Channel MOSFET, 40 A, 650 V, 5-Pin PowerFLAT 8 x 8 HV SCTL90N65G2V
- RS Stock No.:
- 219-4225
- Mfr. Part No.:
- SCTL90N65G2V
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 219-4225
- Mfr. Part No.:
- SCTL90N65G2V
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PowerFLAT 8 x 8 HV | |
| Series | SCTL90N | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 0.24 O | |
| Maximum Gate Threshold Voltage | 5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PowerFLAT 8 x 8 HV | ||
Series SCTL90N | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 0.24 O | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency
Low capacitances
Source sensing pin for increased efficiency