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Infineon 500V CoolMOS CE Type N-Channel MOSFET, 6.6 A, 500 V N, 3-Pin TO-220 IPA50R950CEXKSA2

RS Stock No.:: 218-2994
Mfr. Part No.:: IPA50R950CEXKSA2
Brand:: Infineon

Infineon 500V CoolMOS CE Type N-Channel MOSFET, 6.6 A, 500 V N, 3-Pin TO-220 IPA50R950CEXKSA2

Subtotal (1 pack of 25 units)*

£4.95

(exc. VAT)

£5.95

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

275 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 +	£0.198	£4.95

*price indicative

RS Stock No.:: 218-2994
Mfr. Part No.:: IPA50R950CEXKSA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6.6A
	Maximum Drain Source Voltage Vds	500V
	Series	500V CoolMOS CE
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	950mΩ
	Channel Mode	N
	Forward Voltage Vf	0.83V
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	12.4nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	29.75mm
	Width	4.9 mm
	Length	16.15mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6.6A
	Maximum Drain Source Voltage Vds 500V
	Series 500V CoolMOS CE
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 950mΩ
	Channel Mode N
	Forward Voltage Vf 0.83V
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 12.4nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 29.75mm
	Width 4.9 mm
	Length 16.15mm
	Automotive Standard No

Datasheet - IPA50R950CEXKSA2

The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. It provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and

offering the best cost down performance ratio available on the market.

Very high commutation ruggedness

Easy to use/drive

Pb-free plating, Halogen free mold compound