Infineon N-Channel MOSFET, 19 A, 100 V DirectFET ISOMETRIC IRF6665TRPBF
- RS Stock No.:
- 217-2600
- Mfr. Part No.:
- IRF6665TRPBF
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 217-2600
- Mfr. Part No.:
- IRF6665TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DirectFET ISOMETRIC | |
| Mounting Type | Surface Mount | |
| Maximum Drain Source Resistance | 62 mO | |
| Maximum Gate Threshold Voltage | 5V | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DirectFET ISOMETRIC | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 62 mO | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Low parasitic (1-2 nH) inductance package
100% lead-free (No RoHS exemption)
Product qualification according to JEDEC standard
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Low parasitic (1-2 nH) inductance package
100% lead-free (No RoHS exemption)