Infineon CoolMOS C7 Type N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-220 IPP60R040C7XKSA1

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£6.49

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£7.79

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1 - 9£6.49
10 - 24£5.96
25 - 49£5.58
50 - 99£5.19
100 +£4.80

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Packaging Options:
RS Stock No.:
217-2557
Mfr. Part No.:
IPP60R040C7XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS C7

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

227W

Typical Gate Charge Qg @ Vgs

107nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

29.95mm

Standards/Approvals

No

Width

4.57 mm

Length

10.36mm

Automotive Standard

No

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

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