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Infineon IPD Type N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1

RS Stock No.:: 217-2536
Mfr. Part No.:: IPD95R450P7ATMA1
Brand:: Infineon

Infineon IPD Type N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1

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Subtotal (1 pack of 10 units)*

£14.80

(exc. VAT)

£17.80

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

1,640 unit(s) ready to ship

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Units	Per unit	Per Pack*
10 - 10	£1.48	£14.80
20 - 40	£1.406	£14.06
50 - 90	£1.376	£13.76
100 - 240	£1.288	£12.88
250 +	£1.199	£11.99

*price indicative

RS Stock No.:: 217-2536
Mfr. Part No.:: IPD95R450P7ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	950V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	35nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	104W
	Maximum Operating Temperature	150°C
	Width	6.22 mm
	Standards/Approvals	No
	Height	2.41mm
	Length	6.73mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 950V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 35nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 104W
	Maximum Operating Temperature 150°C
	Width 6.22 mm
	Standards/Approvals No
	Height 2.41mm
	Length 6.73mm
	Automotive Standard AEC-Q101

Datasheet - IPD95R450P7ATMA1

The Infineon latest 950V CoolMOS™ P7 series sets a new bench mark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and CossBest-in-class DPAK RDS(on) of 450 mΩ

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability