Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 124 A, 30 V Enhancement, 8-Pin PDFN56

Subtotal (1 reel of 2500 units)*

£1,192.50

(exc. VAT)

£1,430.00

(inc. VAT)

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Being discontinued
  • Final 2,500 unit(s), ready to ship
Units
Per unit
Per Reel*
2500 +£0.477£1,192.50

*price indicative

RS Stock No.:
216-9655
Mfr. Part No.:
TSM036N03PQ56
Brand:
Taiwan Semiconductor
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Brand

Taiwan Semiconductor

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

124A

Maximum Drain Source Voltage Vds

30V

Series

TSM025

Package Type

PDFN56

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

50nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21, WEEE 2002/96/EC, RoHS 2011/65/EU

Length

6mm

Height

1.05mm

Width

3.78 mm

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

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