Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 121 A, 40 V Enhancement, 8-Pin PDFN56 TSM033NB04CR

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Subtotal (1 pack of 10 units)*

£20.33

(exc. VAT)

£24.40

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40£2.033£20.33
50 - 90£1.991£19.91
100 - 240£1.83£18.30
250 - 990£1.793£17.93
1000 +£1.661£16.61

*price indicative

Packaging Options:
RS Stock No.:
216-9652
Mfr. Part No.:
TSM033NB04CR
Brand:
Taiwan Semiconductor
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Brand

Taiwan Semiconductor

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

121A

Maximum Drain Source Voltage Vds

40V

Package Type

PDFN56

Series

TSM025

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

79nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

36W

Maximum Operating Temperature

150°C

Standards/Approvals

WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21

Width

3.81 mm

Height

1.05mm

Length

6mm

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

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