Infineon HEXFET N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK IRLR2905TRLPBF

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
215-2607P
Mfr. Part No.:
IRLR2905TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.027 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon HEXFET Power MOSFET series has 55V maximum drain source voltage it is a single N-Channel HEXFET Power MOSFET in a D-Pak package type. The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.

Advanced Process Technology
Ultra Low On-Resistance
Lead-Free
Fully avalanche rated