Infineon CoolMOS™ CFD7 N-Channel MOSFET, 50 A, 600 V, 3-Pin TO-247 IPW60R040CFD7XKSA1
- RS Stock No.:
- 215-2560
- Mfr. Part No.:
- IPW60R040CFD7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£196.38
(exc. VAT)
£235.65
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £6.546 | £196.38 |
| 60 - 120 | £6.218 | £186.54 |
| 150 + | £5.826 | £174.78 |
*price indicative
- RS Stock No.:
- 215-2560
- Mfr. Part No.:
- IPW60R040CFD7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | CoolMOS™ CFD7 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.04 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ CFD7 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.04 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 600V Cool MOS™ CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS™ 7 series. Cool MOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
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