Infineon CoolMOS™ P7 N-Channel MOSFET, 8 A, 800 V, 3-Pin TO-220 IPP80R600P7XKSA1
- RS Stock No.:
- 215-2552
- Mfr. Part No.:
- IPP80R600P7XKSA1
- Brand:
- Infineon
Save 18% when you buy 500 units
Subtotal (1 pack of 10 units)*
£7.96
(exc. VAT)
£9.55
(inc. VAT)
FREE delivery for orders over £50.00
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- 310 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.796 | £7.96 |
| 50 - 90 | £0.757 | £7.57 |
| 100 - 240 | £0.724 | £7.24 |
| 250 - 490 | £0.692 | £6.92 |
| 500 + | £0.645 | £6.45 |
*price indicative
- RS Stock No.:
- 215-2552
- Mfr. Part No.:
- IPP80R600P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | CoolMOS™ P7 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.6 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 800 V | ||
Series CoolMOS™ P7 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.6 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
Best-in-class quality and reliability
Fully optimized portfolio
Related links
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