Infineon CoolMOS™ CFD7 N-Channel MOSFET, 14 A, 600 V, 5-Pin ThinPAK 8 x 8 IPL60R185CFD7AUMA1
- RS Stock No.:
- 215-2522P
- Mfr. Part No.:
- IPL60R185CFD7AUMA1
- Brand:
- Infineon
Subtotal 5 units (supplied on a continuous strip)*
£10.20
(exc. VAT)
£12.25
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 3,000 unit(s) shipping from 13 October 2025
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Units | Per unit |
---|---|
5 + | £2.04 |
*price indicative
- RS Stock No.:
- 215-2522P
- Mfr. Part No.:
- IPL60R185CFD7AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 14 A | |
Maximum Drain Source Voltage | 600 V | |
Series | CoolMOS™ CFD7 | |
Package Type | ThinPAK 8 x 8 | |
Mounting Type | Surface Mount | |
Pin Count | 5 | |
Maximum Drain Source Resistance | 0.185 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ CFD7 | ||
Package Type ThinPAK 8 x 8 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 0.185 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 600V Cool MOS™ CFD7 is latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS™ 7 series. Cool MOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations