Infineon OptiMOS™ -T2 N-Channel MOSFET, 25 A, 60 V, 3-Pin DPAK IPD25N06S4L30ATMA2
- RS Stock No.:
- 215-2504P
- Mfr. Part No.:
- IPD25N06S4L30ATMA2
- Brand:
- Infineon
Subtotal 20 units (supplied on a reel)*. Quantities below 150 on continuous strip
£8.52
(exc. VAT)
£10.22
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 7,300 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
20 + | £0.426 |
*price indicative
- RS Stock No.:
- 215-2504P
- Mfr. Part No.:
- IPD25N06S4L30ATMA2
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 25 A | |
Maximum Drain Source Voltage | 60 V | |
Series | OptiMOS™ -T2 | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.3 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.2V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ -T2 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||