Infineon HEXFET N-Channel MOSFET, 19 A, 300 V, 3-Pin D2PAK AUIRFS6535

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Packaging Options:
RS Stock No.:
215-2452
Mfr. Part No.:
AUIRFS6535
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

300 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.185 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon HEXFET Power MOSFET Automotive Q101 has 300V maximum drain source voltage with 19A maximum continuous drain current in a D2-Pak Package. It has Piezo Injection potential application. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology
Low On-Resistance
Lead-Free, RoHS Compliant

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