N-Channel MOSFET, 106 A, 40 V DirectFET ISOMETRIC Infineon IRF6616TRPBF

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve low combined on-state and switching loss in a package that has the footprint of a SO-8 and only 0.7 mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Low Conduction and Switching Losses
Optimized for High Frequency Switching