N-Channel MOSFET, 9.9 A, 600 V, 3-Pin IPAK Infineon IPS60R650CEAKMA1

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RS will no longer stock this product.
Packaging Options:
RS Stock No.:
214-9101
Mfr. Part No.:
IPS60R650CEAKMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

600 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.65 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Transistor Material

Si

Number of Elements per Chip

1

Series

CoolMOS CE

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive
Very high commutation ruggedness
Qualified for standard grade applications