Infineon HEXFET Type N-Channel MOSFET, 160 A, 40 V, 3-Pin TO-263 IRL1404STRLPBF
- RS Stock No.:
- 214-4466
- Mfr. Part No.:
- IRL1404STRLPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
£18.70
(exc. VAT)
£22.40
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 500 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | £1.87 | £18.70 |
| 20 - 40 | £1.777 | £17.77 |
| 50 - 90 | £1.702 | £17.02 |
| 100 - 240 | £1.627 | £16.27 |
| 250 + | £1.515 | £15.15 |
*price indicative
- RS Stock No.:
- 214-4466
- Mfr. Part No.:
- IRL1404STRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche
It is lead-free
Related links
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