Infineon DirectFET Type N-Channel MOSFET, 25 A, 100 V, 3-Pin DirectFET
- RS Stock No.:
- 214-4455P
- Mfr. Part No.:
- IRF6645TRPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal 50 units (supplied on a continuous strip)*
£32.80
(exc. VAT)
£39.35
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 3,340 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 90 | £0.656 |
| 100 - 240 | £0.629 |
| 250 - 490 | £0.601 |
| 500 + | £0.559 |
*price indicative
- RS Stock No.:
- 214-4455P
- Mfr. Part No.:
- IRF6645TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DirectFET | |
| Series | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Maximum Power Dissipation Pd | 42W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DirectFET | ||
Series DirectFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Maximum Power Dissipation Pd 42W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Strong IRFET power MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness.
It is optimized for synchronous rectification