Infineon OptiMOS™ 5 N-Channel MOSFET, 40 A, 80 V, 8-Pin PQFN 3 x 3 BSZ070N08LS5ATMA1

Subtotal (1 reel of 5000 units)*

£2,470.00

(exc. VAT)

£2,965.00

(inc. VAT)

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RS Stock No.:
214-4340
Mfr. Part No.:
BSZ070N08LS5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ 5

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0094 Ω

Maximum Gate Threshold Voltage

2.3V

Number of Elements per Chip

1

OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package


Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Summary of Features


  • Low R DS(on) in small package

  • Low gate charge

  • Lower output charge

  • Logic level compatibility

Benefits


  • Higher power density designs

  • Higher switching frequency

  • Reduced parts count wherever 5V supplies are available

  • Driven directly from microcontrollers (slow switching)

  • System cost reduction

Potential Applications


  • Wireless charging

  • Adapter

  • Telecom

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