STMicroelectronics SCTL35N65G2V SiC N-Channel MOSFET, 40 A, 650 V, 5-Pin PowerFLAT 8 x 8 HV SCTL35N65G2V

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Subtotal 50 units (supplied on a continuous strip)*

£567.00

(exc. VAT)

£680.50

(inc. VAT)

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50 - 99£11.34
100 - 249£11.05
250 +£10.77

*price indicative

Packaging Options:
RS Stock No.:
213-3942P
Mfr. Part No.:
SCTL35N65G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Series

SCTL35N65G2V

Package Type

PowerFLAT 8 x 8 HV

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

0.067 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode
Low capacitance
Source sensing pin for increased efficiency