STMicroelectronics STD11N60M6 Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 212-2104
- Mfr. Part No.:
- STD11N60M6
- Brand:
- STMicroelectronics
Subtotal (1 reel of 2500 units)*
£1,637.50
(exc. VAT)
£1,965.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.655 | £1,637.50 |
*price indicative
- RS Stock No.:
- 212-2104
- Mfr. Part No.:
- STD11N60M6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | STD11N60M6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 90W | |
| Typical Gate Charge Qg @ Vgs | 10.3nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series STD11N60M6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 90W | ||
Typical Gate Charge Qg @ Vgs 10.3nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Automotive Standard No | ||
MDMesh M6 MOSFET N-CH
The STMicroelectronics MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. It builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Related links
- STMicroelectronics STD11N60M6 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD11N60M6
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementRVQ(S
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R600P7ATMA1
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- STMicroelectronics STripFET H7 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 STD45N10F7
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252