STMicroelectronics SCT1000N170 N-Channel MOSFET, 7 A, 1700 V, 3-Pin HiP247 SCT1000N170

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Subtotal 5 units (supplied in a tube)*

£41.40

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£49.70

(inc. VAT)

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  • 999,999,999 unit(s) shipping from 08 June 2026
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5 - 9£8.28
10 +£8.08

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Packaging Options:
RS Stock No.:
212-2092P
Mfr. Part No.:
SCT1000N170
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

1700 V

Package Type

HiP247

Series

SCT1000N170

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.66 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Transistor Material

Si

Number of Elements per Chip

1

SiC MOSFET


The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.

High speed switching performance
Very fast and robust intrinsic body diode
Low capacitances