N-Channel MOSFET, 72 A, 650 V, 4-Pin TO-247-4 STMicroelectronics STW68N65DM6-4AG
- RS Stock No.:
- 210-8748
- Mfr. Part No.:
- STW68N65DM6-4AG
- Brand:
- STMicroelectronics
Available to back order for despatch 09/06/2025
Price Each (In a Tube of 30)
£7.67
(exc. VAT)
£9.20
(inc. VAT)
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £7.67 | £230.10 |
*price indicative
- RS Stock No.:
- 210-8748
- Mfr. Part No.:
- STW68N65DM6-4AG
- Brand:
- STMicroelectronics
Technical Reference
Legislation and Compliance
Product Details
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.
Designed for automotive applications
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Excellent switching performance thanks to the extra driving source pin
Zener-protected
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Excellent switching performance thanks to the extra driving source pin
Zener-protected
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 72 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-247-4 |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 39 mΩ |
| Maximum Gate Threshold Voltage | 4.75V |
| Number of Elements per Chip | 1 |
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