Vishay SiR882BDP Type N-Channel MOSFET, 67.5 A, 100 V Enhancement, 8-Pin SO-8

Bulk discount available

Subtotal 100 units (supplied on a continuous strip)*

£107.80

(exc. VAT)

£129.40

(inc. VAT)

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Units
Per unit
100 - 240£1.078
250 - 490£1.021
500 - 990£0.978
1000 +£0.921

*price indicative

Packaging Options:
RS Stock No.:
210-5007P
Mfr. Part No.:
SiR882BDP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

67.5A

Maximum Drain Source Voltage Vds

100V

Series

SiR882BDP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

54nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

83.3W

Maximum Operating Temperature

150°C

Length

6.25mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has PowerPAK SO-8 package type.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested