Vishay SiDR170DP Type N-Channel MOSFET, 95 A, 100 V Enhancement, 8-Pin SO-8 SiDR170DP-T1-RE3
- RS Stock No.:
- 210-4955
- Mfr. Part No.:
- SiDR170DP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£13.44
(exc. VAT)
£16.13
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 545 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.688 | £13.44 |
| 50 - 120 | £2.45 | £12.25 |
| 125 - 245 | £1.912 | £9.56 |
| 250 - 495 | £1.612 | £8.06 |
| 500 + | £1.428 | £7.14 |
*price indicative
- RS Stock No.:
- 210-4955
- Mfr. Part No.:
- SiDR170DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | SiDR170DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.51mm | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Length | 5.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series SiDR170DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 0.51mm | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Length 5.9mm | ||
Automotive Standard No | ||
The Vishay N-Channel 100 V (D-S) MOSFET has PowerPAK SO-8DC package type.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
Related links
- Vishay N-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8DC SiDR170DP-T1-RE3
- Vishay N-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8DC SIDR104AEP-T1-RE3
- Vishay N-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8DC SIDR5102EP-T1-RE3
- Vishay N-Channel MOSFET 100 V, 8-Pin PowerPak SO-8DC SIDR510EP-T1-RE3
- Vishay N-Channel MOSFET 30 V, 8-Pin PowerPak SO-8DC SIDR500EP-T1-RE3
- Vishay N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8DC SiDR626LDP-T1-RE3
- Vishay N-Channel MOSFET 25 V, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3
- Vishay N-Channel MOSFET 150 V, 8-Pin PowerPAK SO-8DC SIDR578EP-T1-RE3