STMicroelectronics STO67N60DM6 N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STO67N60DM6

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Subtotal 2 units (supplied on a continuous strip)*

£9.66

(exc. VAT)

£11.60

(inc. VAT)

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2 +£4.83

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Packaging Options:
RS Stock No.:
206-8631P
Mfr. Part No.:
STO67N60DM6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

600 V

Series

STO67N60DM6

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

59 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

25V

Transistor Material

Si

Number of Elements per Chip

1

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin