Diodes Inc DMT10 N-Channel MOSFET, 19 A, 100 V, 8-Pin PowerDI5060-8 DMT10H4M5LPS-13
- RS Stock No.:
- 206-0139
- Mfr. Part No.:
- DMT10H4M5LPS-13
- Brand:
- DiodesZetex
Stock information currently inaccessible
- RS Stock No.:
- 206-0139
- Mfr. Part No.:
- DMT10H4M5LPS-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PowerDI5060-8 | |
| Series | DMT10 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0062 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PowerDI5060-8 | ||
Series DMT10 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0062 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
- COO (Country of Origin):
- CN
The DiodesZetex 100V,8 pin N-channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, this device is ideal for use in notebook battery power management and load switch. Its gate-source voltage is 20V with 2.3 W thermal power dissipation.
Low on-resistance
Fast switching speed
Fast switching speed