DiodesZetex Dual DMNH6035 1 Type N-Channel MOSFET, 33 A, 60 V Enhancement, 8-Pin PowerDI5060

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Subtotal (1 reel of 2500 units)*

£1,417.50

(exc. VAT)

£1,700.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.567£1,417.50

*price indicative

RS Stock No.:
206-0096
Mfr. Part No.:
DMNH6035SPDW-13
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerDI5060

Series

DMNH6035

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

68W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

10nC

Forward Voltage Vf

0.75V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Length

4.9mm

Standards/Approvals

No

Height

1.05mm

Width

5.8 mm

Number of Elements per Chip

1

Automotive Standard

AEC-Q100, AEC-Q101, AEC-Q200

COO (Country of Origin):
CN
The DiodesZetex 60V N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 2.4 W thermal power dissipation.

Rated to +175°C is ideal for high ambient temperature environment

Low Qg – minimises switching losses

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