DiodesZetex DMG3402 Type N-Channel MOSFET, 4 A, 30 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 206-0068
- Mfr. Part No.:
- DMG3402LQ-7
- Brand:
- DiodesZetex
Subtotal (1 reel of 3000 units)*
£297.00
(exc. VAT)
£357.00
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 21 June 2027
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.099 | £297.00 |
*price indicative
- RS Stock No.:
- 206-0068
- Mfr. Part No.:
- DMG3402LQ-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | DMG3402 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Forward Voltage Vf | 1.16V | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Length | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series DMG3402 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Forward Voltage Vf 1.16V | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Length 2.3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V N-channel enhancement mode filed effect transistor is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 12 V with 1.4W thermal power dissipation.
Low input capacitance
Fast switching speed
Related links
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