Diodes Inc DMC3060 Dual N/P-Channel MOSFET, 2.8 A, 3.6 A, 30 V, 6-Pin TSOT-26 DMC3060LVT-7
- RS Stock No.:
- 206-0060
- Mfr. Part No.:
- DMC3060LVT-7
- Brand:
- DiodesZetex
Subtotal (1 reel of 3000 units)*
£294.00
(exc. VAT)
£354.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 13 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.098 | £294.00 |
*price indicative
- RS Stock No.:
- 206-0060
- Mfr. Part No.:
- DMC3060LVT-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 2.8 A, 3.6 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | DMC3060 | |
| Package Type | TSOT-26 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 0.15 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.8V | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 2.8 A, 3.6 A | ||
Maximum Drain Source Voltage 30 V | ||
Series DMC3060 | ||
Package Type TSOT-26 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 0.15 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.8V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V complementary pair enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 12 V with 0.83W thermal power dissipation.
Low input capacitance
Fast switching speed
Fast switching speed
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