SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 onsemi NTHL080N120SC1A
- RS Stock No.:
- 205-2502
- Mfr. Part No.:
- NTHL080N120SC1A
- Brand:
- onsemi
400 In stock - FREE next working day delivery available
Added
Price Each
£10.66
(exc. VAT)
£12.79
(inc. VAT)
| Units | Per unit |
| 1 - 9 | £10.66 |
| 10 - 99 | £9.19 |
| 100 - 249 | £7.62 |
| 250 - 499 | £7.17 |
| 500 + | £6.71 |
- RS Stock No.:
- 205-2502
- Mfr. Part No.:
- NTHL080N120SC1A
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
The ON Semiconductor NTH series SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 31A
Drain to source on resistance rating is 110mohm
High speed switching and low capacitance
100% UIL tested
Low effective output capacitance
Package type is TO-247-3LD
Drain to source on resistance rating is 110mohm
High speed switching and low capacitance
100% UIL tested
Low effective output capacitance
Package type is TO-247-3LD
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 31 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Series | NTH |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 110 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
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