Vishay SiHG068N60EF N-Channel MOSFET, 41 A, 600 V, 3-Pin TO-247AC SIHG068N60EF-GE3
- RS Stock No.:
- 204-7250
- Mfr. Part No.:
- SIHG068N60EF-GE3
- Brand:
- Vishay
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 204-7250
- Mfr. Part No.:
- SIHG068N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 41 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | SiHG068N60EF | |
| Package Type | TO-247AC | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.068 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 41 A | ||
Maximum Drain Source Voltage 600 V | ||
Series SiHG068N60EF | ||
Package Type TO-247AC | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.068 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Avalanche energy rated (UIS)
Low figure-of-merit (FOM) Ron x Qg
Low figure-of-merit (FOM) Ron x Qg