Vishay SiHG105N60EF N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247AC SIHG105N60EF-GE3
- RS Stock No.:
- 204-7209P
- Mfr. Part No.:
- SIHG105N60EF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
£56.45
(exc. VAT)
£67.75
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 470 unit(s), ready to ship
Units | Per unit |
---|---|
25 - 45 | £2.258 |
50 - 120 | £2.126 |
125 - 245 | £1.996 |
250 + | £1.86 |
*price indicative
- RS Stock No.:
- 204-7209P
- Mfr. Part No.:
- SIHG105N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 29 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | TO-247AC | |
Series | SiHG105N60EF | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.102 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247AC | ||
Series SiHG105N60EF | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.102 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er)
Low effective capacitance (Co(er)