STMicroelectronics DM6 N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-247 STW50N65DM6

View all MOSFETs

Subtotal 2 units (supplied in a tube)*

£7.19

(exc. VAT)

£8.628

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 24 unit(s) shipping from 06 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
2 +£3.595

*price indicative

Packaging Options:
RS Stock No.:
204-3948P
Mfr. Part No.:
STW50N65DM6
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

DM6

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.091 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

COO (Country of Origin):
CN
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected