onsemi NTB SiC N-Channel MOSFET Transistor, 60 A, 1200 V, 7-Pin D2PAK NTBG040N120SC1

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Subtotal 50 units (supplied on a continuous strip)*

£645.00

(exc. VAT)

£774.00

(inc. VAT)

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  • Plus 725 left, shipping from 10 November 2025
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50 +£12.90

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Packaging Options:
RS Stock No.:
202-5690P
Mfr. Part No.:
NTBG040N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

1200 V

Series

NTB

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.04 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Transistor Material

SiC

Number of Elements per Chip

1

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.

40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant