onsemi NTB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263

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Subtotal 50 units (supplied on a continuous strip)*

£657.50

(exc. VAT)

£789.00

(inc. VAT)

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50 +£13.15

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Packaging Options:
RS Stock No.:
202-5690P
Mfr. Part No.:
NTBG040N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Series

NTB

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Forward Voltage Vf

3.7V

Typical Gate Charge Qg @ Vgs

106nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

357W

Maximum Operating Temperature

175°C

Height

15.7mm

Standards/Approvals

RoHS

Length

10.2mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.

40mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

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