SiC N-Channel MOSFET Transistor, 60 A, 1200 V, 7-Pin D2PAK onsemi NTBG040N120SC1

RS Stock No.:: 202-5690
Mfr. Part No.:: NTBG040N120SC1
Brand:: onsemi

SiC N-Channel MOSFET Transistor, 60 A, 1200 V, 7-Pin D2PAK onsemi NTBG040N120SC1

795 In stock - FREE next working day delivery available

Added

Price Each (In a Pack of 5)

£18.60

(exc. VAT)

£22.32

(inc. VAT)

Units	Per unit	Per Pack*
5 - 5	£18.60	£93.00
10 - 20	£17.112	£85.56
25 - 95	£16.406	£82.03
100 - 245	£14.174	£70.87
250 +	£13.748	£68.74
*price indicative

RS Stock No.:: 202-5690
Mfr. Part No.:: NTBG040N120SC1
Brand:: onsemi

Technical Reference

Datasheet - NTBG040N120SC1

Legislation and Compliance

Product Details

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.

40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	1200 V
Series	NTB
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	0.04 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.3V
Number of Elements per Chip	1
Transistor Material	SiC

RS Stock No.:: 202-5690
Mfr. Part No.:: NTBG040N120SC1
Brand:: onsemi

Datasheet - NTBG040N120SC1

SiC N-Channel MOSFET Transistor, 60 A, 1200 V, 7-Pin D2PAK onsemi NTBG040N120SC1

Technical Reference

Legislation and Compliance

Product Details

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

Specifications

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

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