STMicroelectronics ST SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STWA70N65DM6

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Subtotal 5 units (supplied in a tube)*

£54.70

(exc. VAT)

£65.65

(inc. VAT)

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5 - 9£10.94
10 +£9.61

*price indicative

Packaging Options:
RS Stock No.:
202-5555P
Mfr. Part No.:
STWA70N65DM6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

ST

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.036 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.

100% avalanche tested
Zener-protected