STMicroelectronics ST SiC N-Channel MOSFET Module, 62 A, 600 V Depletion, 4-Pin TO-247-4 STW70N60DM6-4

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Packaging Options:
RS Stock No.:
202-5545
Mfr. Part No.:
STW70N60DM6-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

62 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.036 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.

100% avalanche tested
Zener-protected

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