STMicroelectronics SCT SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin HIP247 3pins SCTW100N65G2AG

View all MOSFETs
Bulk discount available

Subtotal 5 units (supplied in a tube)*

£108.75

(exc. VAT)

£130.50

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 06 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
5 - 9£21.75
10 +£21.21

*price indicative

Packaging Options:
RS Stock No.:
202-5486P
Mfr. Part No.:
SCTW100N65G2AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Package Type

HIP247 3pins

Series

SCT

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.105 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode
Low capacitance