STMicroelectronics SCT SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120
- RS Stock No.:
- 202-5479P
- Mfr. Part No.:
- SCT50N120
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 5 units (supplied in a tube)*
£125.50
(exc. VAT)
£150.60
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,999 unit(s) shipping from 05 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 - 9 | £25.10 |
| 10 + | £24.47 |
*price indicative
- RS Stock No.:
- 202-5479P
- Mfr. Part No.:
- SCT50N120
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 65 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | SCT | |
| Package Type | HiP247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.59 Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Threshold Voltage | 3V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 65 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series SCT | ||
Package Type HiP247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.59 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 3V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance
Low capacitance