STMicroelectronics SCT SiC N-Channel SiC Power Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120AG

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Subtotal 5 units (supplied in a tube)*

£30.50

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£36.60

(inc. VAT)

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Packaging Options:
RS Stock No.:
202-4803P
Mfr. Part No.:
SCT10N120AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

HiP247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.52 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

25V

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
CN
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.

Very fast and robust intrinsic body diode
Low capacitance