STMicroelectronics SCT SiC N-Channel SiC Power Module, 12 A, 1200 V Depletion, 3-Pin HiP247 SCT10N120AG
- RS Stock No.:
- 202-4803P
- Mfr. Part No.:
- SCT10N120AG
- Brand:
- STMicroelectronics
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Subtotal 5 units (supplied in a tube)*
£30.50
(exc. VAT)
£36.60
(inc. VAT)
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Temporarily out of stock
- 582 unit(s) ready to ship
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Units | Per unit |
---|---|
5 - 9 | £6.10 |
10 + | £5.95 |
*price indicative
- RS Stock No.:
- 202-4803P
- Mfr. Part No.:
- SCT10N120AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 12 A | |
Maximum Drain Source Voltage | 1200 V | |
Series | SCT | |
Package Type | HiP247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.52 Ω | |
Channel Mode | Depletion | |
Maximum Gate Threshold Voltage | 25V | |
Number of Elements per Chip | 1 | |
Transistor Material | SiC | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series SCT | ||
Package Type HiP247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.52 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 25V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Very fast and robust intrinsic body diode
Low capacitance
Low capacitance